cystech electronics corp. spec. no. : c733m3 issued date : 2013.09.18 revised date : page no. : 1/9 MTP2311M3 cystek product specification 60v p-channel enhancement mode mosfet MTP2311M3 bv dss -60v i d -4a r dson @v gs =-10v, i d =-4a 72m (typ.) r dson @v gs =-4.5v, i d =-3a 98m (typ.) features ? single drive requirement ? ultra high speed switching ? pb-free lead plating and halogen-free package symbol outline ordering information device package shipping MTP2311M3-0-t2-g sot-89 (pb-free lead plating and halogen-free package) 1000 pcs / tape & reel MTP2311M3 sot-89 d g d s g gate s source d drain environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t2 : 1000 pc s / tape & reel,7? reel product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c733m3 issued date : 2013.09.18 revised date : page no. : 2/9 MTP2311M3 cystek product specification absolute maximum ratings (ta=25 c) parameter symbol limits unit drain-source voltage v ds -60 gate-source voltage v gs 20 v continuous drain current @ t a =25 c -4 continuous drain current @ t a =70 c i d -3.2 pulsed drain current i dm -20 *1, 3 a total power dissipation (t a =25 ) pd 2 *2 w linear derating factor 0.02 w/ c operating junction and storage temperature tj, tstg -55~+150 c note : *1 . pulse width limited by maximum junction temperature *2. surface mounted on 1 in 2 copper pad of fr-4 board *3. pulse width 300 s, duty cycle 2% thermal data parameter symbol value unit thermal resistance, junction-to-ambient, max r th,j-a 62.5 * c/w * surface mounted on 1 in 2 copper pad of fr-4 board; 270 c/w when mounted on min. copper pad electrical characteristics (tj=25 c, unless otherwise noted) symbol min. typ. max. unit test conditions static bv dss -60 - - v v gs =0, i d =-250 a ? bv dss / ? tj - -0.04 - v/ c reference to 25c, i d =-1ma v gs(th) -1 -1.8 -2.5 v v ds =v gs , i d =-250 a g fs - 5.8 - s v ds =-5v, i d =-3a i gss - - 100 na v gs = 20v, v ds =0 - - -1 a v ds =-48v, v gs =0 i dss - - -25 a v ds =-48v, v gs =0 (tj=70 c) - 72 95 i d =-4a, v gs =-10v *r ds(on) - 98 130 m i d =-3a, v gs =-4.5v dynamic ciss - 929 - coss - 48 - crss - 33 - pf v ds =-30v, v gs =0, f=1mhz *t d(on) - 10 - *t r - 22 - *t d(off) - 27 - *t f - 14 - ns v ds =-30v, i d =-1a, v gs =-10v, r g =6
cystech electronics corp. spec. no. : c733m3 issued date : 2013.09.18 revised date : page no. : 3/9 MTP2311M3 cystek product specification *qg - 14 - *qgs - 3 - *qgd - 3.4 - nc v ds =-30v, i d =-3.5a, v gs =-10v source-drain diode *v sd - -0.78 -1.2 v v gs =0v, i s =-2a *trr - 12 - ns *qrr - 7 - nc i s =-2a, v gs =0, di/dt=100a/ s *pulse test : pulse width 300 s, duty cycle 2% recommended soldering footprint
cystech electronics corp. spec. no. : c733m3 issued date : 2013.09.18 revised date : page no. : 4/9 MTP2311M3 cystek product specification typical characteristics typical output characteristics 0 5 10 15 20 012345 -v ds , drain-source voltage(v) -i d , drain current (a) -v gs =2.5v -v gs =3 v -v gs =3.5v -v gs =4v 10v 9v 8v 7v 6v 4.5 v brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) -bv dss , normalized drain-source breakdown voltage i d =-250 a, v gs =0v static drain-source on-state resistance vs drain current 10 100 1000 0.001 0.01 0.1 1 10 -i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =-10v v gs =-3v v gs =-3.5v v gs =-4.5v v gs =-4v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 024681 -i dr , reverse drain current (a) -v sd , source-drain voltage(v) 0 tj=25c tj=150c v gs =0v static drain-source on-state resistance vs gate-source voltage 0 20 40 60 80 100 120 140 160 180 200 024681 -v gs , gate-source voltage(v) r ds( on) , static drain-source on- state resistance(m) 0 i d =-4a drain-source on-state resistance vs junction tempearture 0.4 0.8 1.2 1.6 2 2.4 -60 -20 20 60 100 140 180 tj, junction temperature(c) r ds( on) , normalized static drain- source on-state resistance v gs =-4.5v, i d =-3a v gs =-10v, i d =-4a
cystech electronics corp. spec. no. : c733m3 issued date : 2013.09.18 revised date : page no. : 5/9 MTP2311M3 cystek product specification typical characteristics(cont.) capacitance vs drain-to-source voltage 10 100 1000 10000 0.1 1 10 100 -v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 -60 -40 -20 0 20 40 60 80 100 120 140 160 tj, junction temperature(c) -v gs( th) ,normalized threshold voltage i d =-250 a forward transfer admittance vs drain current 0.01 0.1 1 10 0.001 0.01 0.1 1 10 -i d , drain current(a) g fs , forward transfer admittance-(s) v ds =-10v pulsed ta=25c gate charge characteristics 0 2 4 6 8 10 02468101214 qg, total gate charge(nc) -v gs , gate-source voltage(v) v ds =-30v i d =-3.5a maximum safe operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 1000 -v ds , drain-source voltage(v) -i d , drain current (a) dc 10ms 100ms 1ms 100 s t a =25c, tj=150c v gs =-10v, r ja =62.5c/w single pulse r ds( on) limit maximum drain current vs junctiontemperature 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 25 50 75 100 125 150 175 tj, junction temperature(c) i d , maximum drain current(a) t a =25c, v gs =-10v, r ja =62.5c/w
cystech electronics corp. spec. no. : c733m3 issued date : 2013.09.18 revised date : page no. : 6/9 MTP2311M3 cystek product specification typical characteristics(cont.) typical transfer characteristics 0 4 8 12 16 20 012345 -v gs , gate-source voltage(v) -i d , drain current(a) v ds =10v single pulse power rating, junction to ambient (note on page 2) 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 pulse width(s) power (w) t j(max) =150c t a =25c ja =62.5c/w transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 t 1 , square wave pulse duration(s) r(t), normalized effectivetransient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *r ja (t) 4.r ja =62.5 c/w
cystech electronics corp. spec. no. : c733m3 issued date : 2013.09.18 revised date : page no. : 7/9 MTP2311M3 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c733m3 issued date : 2013.09.18 revised date : page no. : 8/9 MTP2311M3 cystek product specification recommended wave soldering condition soldering time product peak temperature pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak 10-30 seconds 20-40 seconds temperature(tp) ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c733m3 issued date : 2013.09.18 revised date : page no. : 9/9 MTP2311M3 cystek product specification sot-89 dimension dim inches millimeters inches millimeters min. max. min. max. dim min. max. min. max. a 0.1732 0.1811 4.40 4.60 f 0.0591 typ 1.50 typ b 0.1551 0.1673 3.94 4.25 g 0.1181 typ 3.00 typ c 0.0610 ref 1.55 ref h 0.0551 0.0630 1.40 1.60 d marking: 2311 e f g c b a i d h 3 2 1 date code device name style: pin 1. gate 2. drain 3. source 3-lead sot-89 plastic surface mounted package cystek package code: m3 0.0906 0.1024 2.30 2.60 i 0.0138 0.0173 0.35 0.44 e 0.0126 0.0205 0.32 0.52 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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